The new semiconductor hub will drive innovation, manufacturing, and talent development in the growing GaN sector.
Singapore’s National Gallium Nitride (GaN) Technology Centre, a key initiative for semiconductor research and development, is expected to begin operations in 2025, Minister for Trade and Industry Gan Kim Yong confirmed on Monday (26/02/2024).
Currently undergoing its final preparations, the centre was first announced in October 2022 by Deputy Prime Minister Heng Swee Keat, with an initial investment of US$85 million allocated over five years. This facility aims to advance research, prototyping, and commercialization of GaN-based semiconductor devices.
Gallium nitride is a compound semiconductor created by combining gallium and nitrogen into crystals, offering significant advantages over traditional silicon. GaN is known for its superior efficiency, faster switching speeds, and ability to handle high voltages, making it crucial for next-generation power electronics, 5G communications, and electric vehicles.
The centre will integrate technology developed by Nanyang Technological University and DSO National Laboratories, providing companies access to shared infrastructure and fostering industry-academia collaborations. These efforts are expected to generate new intellectual property and drive innovation within Singapore’s semiconductor sector.
A key focus will also be talent development. Students from institutes of higher learning will participate in research projects at the centre, ensuring a steady pipeline of skilled scientists and engineers. “Over time, we expect the centre to nurture a healthy pipeline of research scientists and engineers in this growing field,” Gan stated.
With global demand for advanced semiconductors increasing, Singapore’s investment in GaN technology positions it as a leader in this critical industry, reinforcing its role as a hub for high-tech manufacturing and innovation.
