New technology centre to support GaN semiconductor research, prototyping, and commercialization
Singapore’s new National Gallium Nitride (GaN) Technology Centre is set to become operational by 2025, focusing on advancing the research, development, and manufacturing of GaN semiconductor devices. Announced in October 2022 with an initial investment of US$85 million over the next five years, the centre will support both academia and industry in the commercialization and prototyping of GaN technologies.
Gallium nitride, a compound semiconductor made by combining gallium and nitrogen, is crucial in the next generation of semiconductor chips, offering superior performance over traditional materials like silicon. The new centre, which is being equipped currently, will feature technology developed by Nanyang Technological University and DSO National Laboratories.
The centre aims to stimulate innovation and collaboration between industry and academia, with the goal of generating new intellectual property and advancing the semiconductor sector in Singapore. Additionally, the centre will provide shared infrastructure to help industry players and research institutions who may not have the resources to develop such facilities on their own.
In line with Singapore’s focus on talent development, students from higher learning institutes will be involved in the centre’s research initiatives, helping to build a future workforce skilled in GaN semiconductor technologies. This initiative is expected to cultivate a strong pipeline of research scientists and engineers in this emerging field.
